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Employment (1)

Le Quy Don Technical University: Hanoi, VN

2008-12-01 to present | Deputy Head of Department
Employment
Source: Self-asserted source
Luong Duy Manh

Education and qualifications (1)

University of Electro-Communications: Tokyo, JP

2012-04-01 to 2016-03-29 | PhD
Education
Source: Self-asserted source
Luong Duy Manh

Works (14)

SIW Directional Coupler with Improved Isolation for X-Band Applications

Electronics
2025-02-17 | Journal article
Contributors: Thuy-Linh Nguyen; Duy-Manh Luong; Ta Van Mai; Huy Hoang Nguyen; Tuan Hung Nguyen; Thi Thu Huong Tran; Khac Phuong Kieu
Source: check_circle
Crossref
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Preferred source (of 2)‎

SIW Directional Coupler with Improved Isolation for X-band Applications

2025-01-15 | Preprint
Contributors: Thuy-Linh Nguyen; Duy Manh Luong; Ta Van Mai; Hoang Huy Nguyen; Hung Tuan Nguyen; Phuong Khac Kieu; Huong Thi Thu Tran
Source: check_circle
Crossref

A Cost-Effective 5-W GaN HEMT Power Amplifier for Sub-6-GHz 5G Wireless Communications

Mobile Networks and Applications
2022 | Journal article
EID:

2-s2.0-85124976006

Part of ISSN: 15728153 1383469X
Contributors: Manh, L.D.; Hoang, V.-P.; Tran, X.N.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier
grade
Preferred source (of 2)‎

A concurrent triple-band RF energy harvesting circuit for IoT sensor networks

IEIE Transactions on Smart Processing and Computing
2021 | Journal article
EID:

2-s2.0-85113303301

Part of ISSN: 22875255
Contributors: Manh, L.D.; Bich, P.T.; Linh, N.T.; Hoang, N.H.; Nam, T.X.; Ishibashi, K.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

Design of a Compact and High-Efficiency 5.8 GHz Microwave Power Amplifier for Wireless Communication Systems

Lecture Notes of the Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering, LNICST
2021 | Book
EID:

2-s2.0-85111375131

Part of ISSN: 1867822X 18678211
Contributors: Manh, L.D.; Hung, N.T.; Anh, N.T.; Loi, D.X.; Hoang, N.H.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

A 3-Stacked GaN HEMT Power Amplifier with Independently Biased Technique

Lecture Notes of the Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering, LNICST
2020 | Book
EID:

2-s2.0-85097598832

Part of ISSN: 18678211
Contributors: Manh, L.D.; Huong, T.T.T.; Doanh, B.Q.; Son, V.Q.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

An Independently Biased 3-stacked GaN HEMT Power Amplifier for Next-Generation Wireless Communication Systems

Radioengineering
2020 | Journal article
EID:

2-s2.0-85100143777

Part of ISSN: 12102512
Contributors: Luong, D.M.; Tran, X.N.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

A Novel Independently Biased 3-Stack GaN HEMT Configuration for Efficient Design of Microwave Amplifiers

Applied Sciences
2019-04 | Journal article | Author
Contributors: Huy Hoang Nguyen; Luong Duy Manh; Gia Duong Bach
Source: check_circle
Multidisciplinary Digital Publishing Institute
grade
Preferred source (of 3)‎

A novel wideband bandpass filter using H-shaped DGS

International Journal of Electrical and Computer Engineering
2018 | Journal article
EID:

2-s2.0-85066119462

Part of ISSN: 20888708
Contributors: Do, V.-P.; Luong, D.-M.; Ta, C.-H.; Doan, M.-T.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

Design of An Independently Biased Cascode GaN HEMT Microwave Power Amplifier

International Conference on Advanced Technologies for Communications
2018 | Conference paper
EID:

2-s2.0-85060827987

Part of ISSN: 21621020 21621039
Contributors: Manh, L.D.; Huy Hoang, N.; Duong, B.G.; Chi Hieu, T.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

External Feedback Effect in Terahertz Resonant Tunneling Diode Oscillators

IEEE Transactions on Terahertz Science and Technology
2018 | Journal article
EID:

2-s2.0-85047783270

Part of ISSN: 2156342X
Contributors: Manh, L.D.; Diebold, S.; Nishio, K.; Nishida, Y.; Kim, J.; Mukai, T.; Fujita, M.; Nagatsuma, T.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier
grade
Preferred source (of 2)‎

Study of injection locking effect in terahertz resonant tunneling diode oscillators

International Conference on Advanced Technologies for Communications
2017 | Conference paper
EID:

2-s2.0-85041963275

Part of ISSN: 21621020 21621039
Contributors: Ta, M.V.; Manh, L.D.; Hoang, N.H.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

Power gain performance enhancement of independently biased heterojunction bipolar transistor cascode chip

Japanese Journal of Applied Physics
2015 | Journal article
EID:

2-s2.0-84926375218

Part of ISSN: 13474065 00214922
Contributors: Luong, D.M.; Takayama, Y.; Ishikawa, R.; Honjo, K.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

Power gain improvement for single-electron transistors

Japanese Journal of Applied Physics
2014 | Journal article
EID:

2-s2.0-84903306826

Part of ISSN: 13474065 00214922
Contributors: Luong, D.M.; Honjo, K.
Source: Self-asserted source
Luong Duy Manh via Scopus - Elsevier

Peer review (1 review for 1 publication/grant)

Review activity for Journal on special topics in mobile networks and applications. (1)