Personal information

Other IDs

Scopus Author ID: 24314589200
ResearcherID: S-4467-2017
Ciência ID: 751D-C0E9-9547

Biography

After getting bachelor and master’s degrees (2006, 2008) in applied physics and electronic engineering from Tohoku University (thesis title: Photo-response in inter-subband of epitaxial ZnO-based Quantum wells), Mohamed joined NEC Corporation (2008-2010) as a hardware engineer for 2.5 years; and participated in the development of multi-function printers. Following his success in getting an individual research fund from the “Japan Society for the Promotion of Science” (known as JSPS), he accomplished his Ph. D thesis (Oct. 2010 – Sept. 2014) in the university mentioned above investigating: “Multi-functionalities of wurtzite-MgZnO based MTJ devices for high magnetic storage density”. Then, he continued his academic research in the topic of: “Electric-field control of wurtzite-MgZnO based MTJ devices for low energy consumption” as a postdoctoral fellow in collaboration with Kanazawa University.

During the period between April 2015 and November 2017, he joined the National Institute for Materials Sciences (NIMS) as an R&D scientist in the Japan governmental project for industry-oriented research called “ImPACT”; and working in the topic of “Developing novel materials as tunnel-barriers in perpendicular-MTJ devices for electrically controlled MRAMs for high magnetic storage density” in collaboration with many leading corporations and research centers in the magnetic storage technologies (Toshiba Memory, TDK, Samsung Electronics, and AIST). Now, he is focusing on the mass production and improvement of high-quality magnetic field sensors for automobiles applications using the fascinating facilities of INL.

Activities

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Funding (1)

Fabrication of magnetic tunnel junctions with ZnO barriers for controllable magnetoresistance by electric field

2013-04 to 2015-03 | Grant
Japan Society for the Promotion of Science (Tokyo, Tokyo, JP)
GRANT_NUMBER: 13J05806
Source: Self-asserted source
Mohamed Belmoubarik
grade
Preferred source (of 2)‎

Works (31)

Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories

Journal of Materials Science: Materials in Electronics
2024 | Journal article
DOI: 10.1007/s10854-024-12195-2
EID:

2-s2.0-85186483314

Part of ISSN: 1573482X 09574522
Contributors: Belmoubarik, M.; Al-Mahdawi, M.; Machado, G.; Nozaki, T.; Coelho, C.; Sahashi, M.; Peng, W.K.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
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The Comprehensive Roadmap Toward Malaria Elimination Using Graphene and its Promising 2D Analogs

Advanced NanoBiomed Research
2024 | Journal article
DOI: 10.1002/anbr.202300130
EID:

2-s2.0-85187662892

Part of ISSN: 26999307
Contributors: He, F.; Junior, G.; Konar, R.; Huang, Y.; Zhang, K.; Ke, L.; Niu, M.; Goh, B.T.; Moutaouakil, A.E.; Nessim, G.D. et al.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Barrier heights and strong fermi-level pinning at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications

Surfaces and Interfaces
2024-10 | Journal article
DOI: 10.1016/j.surfin.2024.105091
Contributors: Mohamed Belmoubarik
Source: check_circle
Crossref
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A Voltage-Tuned Terahertz Absorber Based on MoS<sub>2</sub>/Graphene Nanoribbon Structure

Nanomaterials
2023 | Journal article
DOI: 10.3390/nano13111716
EID:

2-s2.0-85163135478

Part of ISSN: 20794991
Contributors: Samy, O.; Belmoubarik, M.; Otsuji, T.; El Moutaouakil, A.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
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Barrier thickness dependence of the built-in electric field in pseudomorphic ZnO/Zn<sub>0.55</sub>Mg<sub>0.45</sub>O multi-quantum wells

Journal of Alloys and Compounds
2023 | Journal article
DOI: 10.1016/j.jallcom.2023.168960
EID:

2-s2.0-85146906202

Part of ISSN: 09258388
Contributors: Belmoubarik, M.; El Moutaouakil, A.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 2)‎

Fermi-Level Pinning and Barrier Height Control at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications

arXiv
2023 | Other
DOI: 10.48550/arXiv.2401.06778
EID:

2-s2.0-85183381846

Part of ISSN: 23318422
Contributors: Belmoubarik, M.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories

arXiv
2023 | Other
DOI: 10.48550/arXiv.2305.16563
EID:

2-s2.0-85174553067

Part of ISSN: 23318422
Contributors: Belmoubarik, M.; Al-Mahdawi, M.; Machado, G.; Nozaki, T.; Coelho, C.; Sahashi, M.; Peng, W.K.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Barrier Thickness Dependence of the Built-In Electric Field in Pseudomorphic Zno/Zn0.55mg0.45o Multi-Quantum Wells

SSRN
2022 | Other
DOI: 10.2139/ssrn.4280764
EID:

2-s2.0-85177977099

Part of ISSN: 15565068
Contributors: Belmoubarik, M.; Moutaouakil, A.E.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Quantum-well tunneling anisotropic magnetoresistance above room temperature

arXiv
2021 | Other
DOI: 10.48550/arxiv.2105.06234
EID:

2-s2.0-85171057119

Part of ISSN: 23318422
Contributors: Al-Mahdawi, M.; Xiang, Q.; Miura, Y.; Belmoubarik, M.; Masuda, K.; Kasai, S.; Sukegawa, H.; Mitani, S.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Quantum-well tunneling anisotropic magnetoresistance above room temperature

Physical Review B
2021 | Journal article
DOI: 10.1103/PhysRevB.103.L180408
EID:

2-s2.0-85107292840

Part of ISSN: 24699969 24699950
Contributors: Al-Mahdawi, M.; Xiang, Q.; Miura, Y.; Belmoubarik, M.; Masuda, K.; Kasai, S.; Sukegawa, H.; Mitani, S.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 2)‎

Effect of Se‐Free Annealing on Cesium Fluoride‐Treated Cu(In,Ga)Se 2 Thin Films and Corresponding Solar Cells

physica status solidi (RRL) – Rapid Research Letters
2021-12 | Journal article
DOI: 10.1002/pssr.202100462
Part of ISSN: 1862-6254
Part of ISSN: 1862-6270
Source: Self-asserted source
Mohamed Belmoubarik
grade
Preferred source (of 2)‎

Graphene in the fight against malaria

arXiv
2020 | Other
DOI: 10.48550/arxiv.2008.13605
EID:

2-s2.0-85170925838

Part of ISSN: 23318422
Contributors: El Moutaouakil, A.; Belmoubarik, M.; Peng, W.K.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Review: Graphene-based biosensor for Viral Detection

arXiv
2020 | Other
DOI: 10.48550/arxiv.2006.11881
EID:

2-s2.0-85171035418

Part of ISSN: 23318422
Contributors: El Moutaouakil, A.; Poovathy, S.; Belmoubarik, M.; Peng, W.K.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Correction to: Realizing Room-Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl 2 O 4 Quasi-Quantum Well Structures (Advanced Science, (2019), 6, 20, (1901438), 10.1002/advs.201901438)

Advanced Science
2019 | Journal article
DOI: 10.1002/advs.201902995
EID:

2-s2.0-85075582007

Part of ISSN: 21983844
Contributors: Xiang, Q.; Sukegawa, H.; Belmoubarik, M.; Al-Mahdawi, M.; Scheike, T.; Kasai, S.; Miura, Y.; Mitani, S.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl 2 O 4 Quasi‐Quantum Well Structures

Advanced Science
2019-10 | Journal article
DOI: 10.1002/advs.201901438
Part of ISSN: 2198-3844
Part of ISSN: 2198-3844
Source: Self-asserted source
Mohamed Belmoubarik
grade
Preferred source (of 3)‎

Magnetoresistive element and magnetic memory device

2019-08-25 | Patent
PAT: US10305027B2
Source: Self-asserted source
Mohamed Belmoubarik
grade
Preferred source (of 2)‎

Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier

Physical Review B
2019-08-19 | Journal article
DOI: 10.1103/physrevb.100.054423
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Source: Self-asserted source
Mohamed Belmoubarik
grade
Preferred source (of 3)‎

Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl<sub>2</sub>O<sub>4</sub>(001) based barriers

Applied Physics Letters
2018 | Journal article
DOI: 10.1063/1.5013076
EID:

2-s2.0-85040569311

Part of ISSN: 00036951
Contributors: Ikhtiar; Sukegawa, H.; Xu, X.; Belmoubarik, M.; Lee, H.; Kasai, S.; Hono, K.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎

Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier

arXiv
2018 | Other
DOI: 10.48550/arxiv.1810.03838
EID:

2-s2.0-85169728678

Part of ISSN: 23318422
Contributors: Al-Mahdawi, M.; Belmoubarik, M.; Obata, M.; Yoshikawa, D.; Sato, H.; Nozaki, T.; Oda, T.; Sahashi, M.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier

Magnetoresistive element and magnetic storage device

2018-04-05 | Patent
PAT: JP2018056272A
Source: Self-asserted source
Mohamed Belmoubarik
grade
Preferred source (of 2)‎

Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl<sub>2</sub>O<sub>4</sub>/Fe(001) magnetic tunnel junctions

AIP Advances
2017 | Journal article
DOI: 10.1063/1.4973393
EID:

2-s2.0-85008157772

Part of ISSN: 21583226
Contributors: Belmoubarik, M.; Sukegawa, H.; Ohkubo, T.; Mitani, S.; Hono, K.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎

MgGa<sub>2</sub>O<sub>4</sub> spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height

Applied Physics Letters
2017 | Journal article
DOI: 10.1063/1.4977946
EID:

2-s2.0-85016164410

Part of ISSN: 00036951
Contributors: Sukegawa, H.; Kato, Y.; Belmoubarik, M.; Cheng, P.-H.; Daibou, T.; Shimomura, N.; Kamiguchi, Y.; Ito, J.; Yoda, H.; Ohkubo, T. et al.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎

Epitaxial magnetic tunnel junctions with a low barrier height spinel MgGa2O4

2017 IEEE International Magnetics Conference (INTERMAG)
2017-04-24 | Conference abstract
DOI: 10.1109/INTMAG.2017.8007796
Source: Self-asserted source
Mohamed Belmoubarik
grade
Preferred source (of 3)‎

MgAl<sub>2</sub>O<sub>4</sub>(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target

Applied Physics Letters
2016 | Journal article
DOI: 10.1063/1.4945049
EID:

2-s2.0-84963632148

Part of ISSN: 00036951
Contributors: Belmoubarik, M.; Sukegawa, H.; Ohkubo, T.; Mitani, S.; Hono, K.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎

Tunneling electroresistance of MgZnO-based tunnel junctions

Applied Physics Letters
2016 | Journal article
DOI: 10.1063/1.4966180
EID:

2-s2.0-84994048446

Part of ISSN: 00036951
Contributors: Belmoubarik, M.; Al-Mahdawi, M.; Obata, M.; Yoshikawa, D.; Sato, H.; Nozaki, T.; Oda, T.; Sahashi, M.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎

Epitaxial wurtzite-MgZnO barrier based magnetic tunnel junctions deposited on a metallic ferromagnetic electrode

Applied Physics Letters
2015 | Journal article
DOI: 10.1063/1.4923041
EID:

2-s2.0-84933073864

Part of ISSN: 00036951
Contributors: Belmoubarik, M.; Al-Mahdawi, M.; Sato, H.; Nozaki, T.; Sahashi, M.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎

Study on Magneto- and Electro-Transport Properties of Wurtzite-MgZnO Tunnel Barrier Prepared by Molecular Beam Epitaxy

Tohoku Daigaku
2014-09-24 | Dissertation or Thesis
SOURCE-WORK-ID:

cv-prod-id-1178791
Contributors: BELMOUBARIK, MOHAMED
Source: check_circle
CIÊNCIAVITAE

Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions

Journal of Applied Physics
2013 | Conference paper
DOI: 10.1063/1.4794875
EID:

2-s2.0-84877774743

Part of ISSN: 00218979
Contributors: Belmoubarik, M.; Nozaki, T.; Endo, H.; Sahashi, M.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎

Region separation apparatus, image forming apparatus, region separation method, and region separation program

2012-01-09 | Patent
PAT: JP2012015719A
Source: Self-asserted source
Mohamed Belmoubarik
grade
Preferred source (of 2)‎

Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth
2009 | Journal article
DOI: 10.1016/j.jcrysgro.2008.09.134
EID:

2-s2.0-63349097461

Part of ISSN: 00220248
Contributors: Ohtani, K.; Belmoubarik, M.; Ohno, H.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎

Intersubband transitions in ZnO multiple quantum wells

Applied Physics Letters
2008 | Journal article
DOI: 10.1063/1.2926673
EID:

2-s2.0-44049088081

Part of ISSN: 00036951
Contributors: Belmoubarik, M.; Ohtani, K.; Ohno, H.
Source: Self-asserted source
Mohamed Belmoubarik via Scopus - Elsevier
grade
Preferred source (of 3)‎
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