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Scopus Author ID: 57197021526

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Employment (1)

Institute of High Pressure Physics: Warsaw, PL

2017-09-01 to present
Employment
Source: Self-asserted source
Mikołaj Żak

Works (17)

Oscillations in Absorption from InGaN/GaN Quantum Well to Continuum

Nanomaterials
2025-01-23 | Journal article
DOI: 10.3390/nano15030174
Contributors: Marta Gładysiewicz-Kudrawiec; Mikołaj Żak; Witold Trzeciakowski
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Crossref
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Preferred source (of 2)‎

Bidirectional light-emitting diode as a visible light source driven by alternating current

Nature Communications
2023-11-20 | Journal article
DOI: 10.1038/s41467-023-43335-7
Contributors: Mikołaj Żak; Grzegorz Muziol; Marcin Siekacz; Artem Bercha; Mateusz Hajdel; Krzesimir Nowakowski-Szkudlarek; Artur Lachowski; Mikołaj Chlipała; Paweł Wolny; Henryk Turski et al.
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Crossref

Bidirectional LED as an AC-driven visible-light source

2023-04-04 | Preprint
DOI: 10.21203/rs.3.rs-2741889/v1
Contributors: Mikołaj Żak; Grzegorz Muziol; Marcin Siekaz; Artem Bercha; Mateusz Hajdel; Krzesimir Szkudlarek; Artur Lachowski; Mikołaj Chlipała; Paweł Wolny; Henryk Turski et al.
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Crossref

Electrically pumped blue laser diodes with nanoporous bottom cladding

arXiv
2022 | Other
EID:

2-s2.0-85123446296

Part of ISSN: 23318422
Contributors: Sawicka, M.; Muziol, G.; Fiuczek, N.; Hajdel, M.; Siekacz, M.; Feduniewicz-Zmuda, A.; Nowakowski-Szkudlarek, K.; Wolny, P.; Zak, M.; Turski, H. et al.
Source: Self-asserted source
Mikołaj Żak via Scopus - Elsevier
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Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection

Acta Materialia
2022 | Journal article
DOI: 10.1016/j.actamat.2022.118018
EID:

2-s2.0-85130415497

Part of ISSN: 13596454
Contributors: Fiuczek, N.; Sawicka, M.; Feduniewicz-Żmuda, A.; Siekacz, M.; Żak, M.; Nowakowski-Szkudlarek, K.; Muzioł, G.; Wolny, P.; Kelly, J.J.; Skierbiszewski, C.
Source: Self-asserted source
Mikołaj Żak via Scopus - Elsevier

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Optics Express
2022 | Journal article
DOI: 10.1364/OE.458950
EID:

2-s2.0-85134324815

Part of ISSN: 10944087
Contributors: Slawinska, J.; Muziol, G.; Siekacz, M.; Turski, H.; Hajdel, M.; Zak, M.; Feduniewicz-Zmuda, A.; Staszczak, G.; Skierbiszewski, C.
Source: Self-asserted source
Mikołaj Żak via Scopus - Elsevier

Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer

Applied Physics Letters
2022-04-25 | Journal article
DOI: 10.1063/5.0082297
Contributors: Mikołaj Chlipała; Henryk Turski; Mikołaj Żak; Grzegorz Muziol; Marcin Siekacz; Krzesimir Nowakowski-Szkudlarek; Natalia Fiuczek; Anna Feduniewicz-Żmuda; Julita Smalc-Koziorowska; Czesław Skierbiszewski
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Crossref

Tunnel Junctions with a Doped ( In,Ga)N Quantum Well for Vertical Integration of III -Nitride Optoelectronic Devices

Physical Review Applied
2021-02-19 | Journal article
DOI: 10.1103/PhysRevApplied.15.024046
Contributors: M. Żak; G. Muziol; H. Turski; M. Siekacz; K. Nowakowski-Szkudlarek; A. Feduniewicz-Żmuda; M. Chlipała; A. Lachowski; C. Skierbiszewski
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Crossref

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

Opt. Express
2020 | Journal article
DOI: 10.1364/OE.405994
Source: Self-asserted source
Mikołaj Żak

Nitride LEDs and Lasers with Buried Tunnel Junctions

ECS Journal of Solid State Science and Technology
2020 | Journal article
DOI: 10.1149/2.0412001jss
Part of ISSN: 2162-8769
Part of ISSN: 2162-8777
Source: Self-asserted source
Mikołaj Żak

Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

Optica Applicata
2020 | Journal article
DOI: 10.37190/OA200215
Source: Self-asserted source
Mikołaj Żak

Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

Electronics
2020 | Journal article
DOI: 10.3390/electronics9091481
Part of ISSN: 2079-9292
Source: Self-asserted source
Mikołaj Żak

Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design

Gallium Nitride Materials and Devices XV
2020-02-16 | Conference paper
DOI: 10.1117/12.2548996
EID:

2-s2.0-85082663873

Part of ISSN: 1996756X 0277786X
Part of ISBN: 9781510633230
Part of ISBN: 9781510633247
Source: Self-asserted source
Mikołaj Żak

Buried tunnel junction for p-down nitride laser diodes

2019 Device Research Conference (DRC)
2019-06 | Conference paper
Part of DOI: 10.1109/drc46940.2019.9046396
Part of ISBN: 9781728121116
Part of ISBN: 9781728121123
EID:

2-s2.0-85083188639

Part of ISSN: 15483770
Source: Self-asserted source
Mikołaj Żak

Tunnel junctions for vertically integrated multiple nitrides laser diodes

2019 Device Research Conference (DRC)
2019-06 | Conference paper
DOI: 10.1109/DRC46940.2019.9046428
EID:

2-s2.0-85083205837

Part of ISSN: 15483770
Part of ISBN: 9781728121116
Part of ISBN: 9781728121123
Source: Self-asserted source
Mikołaj Żak

Stack of two III-nitride laser diodes interconnected by a tunnel junction

Optics Express
2019-02-18 | Journal article
DOI: 10.1364/oe.27.005784
Part of ISSN: 1094-4087
Source: Self-asserted source
Mikołaj Żak

Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

2018 76th Device Research Conference (DRC)
2018-06 | Conference paper
Part of DOI: 10.1109/drc.2018.8442192
Part of ISBN: 9781538630273
Part of ISBN: 9781538630280
EID:

2-s2.0-85053203582

Part of ISSN: 15483770
Source: Self-asserted source
Mikołaj Żak

Peer review (1 review for 1 publication/grant)

Review activity for Micro and nanostructures. (1)
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