Personal information

Slovenia

Activities

Employment (1)

Jožef Stefan Institute: Ljubljana, SI

2015-10-01 to present (Advanced Materials Department)
Employment
Source: Self-asserted source
Tjaša Parkelj Potočnik

Education and qualifications (2)

Jožef Stefan International Postgraduate School: Ljubljana, SI

2015-10-01 to present | PhD (Nanosciences and Nanotechnologies)
Education
Source: Self-asserted source
Tjaša Parkelj Potočnik

University of Ljubljana: Ljubljana, SI

2012-10-01 to 2015-09-15 | Master of Science in Physics (Faculty of Mathematics and Physics)
Education
Source: Self-asserted source
Tjaša Parkelj Potočnik

Works (5)

Single crystal-like thin films of blue bronze

Thin Solid Films
2021-08 | Journal article
Contributors: Damir Dominko; Damir Starešinić; Katica Biljaković; Maja Đekić; Amra Salčinović Fetić; Kerim Hrvat; Matej Lozančić; Jure Demsar; Vladimir Grigorev; Tjaša Parkelj Potočnik et al.
Source: check_circle
Crossref

Epitaxial ferroelectric oxides on silicon with perspectives for future device applications

APL Materials
2021-04-01 | Journal article
Contributors: Matjaž Spreitzer; Dejan Klement; Tjaša Parkelj Potočnik; Urška Trstenjak; Zoran Jovanović; Minh Duc Nguyen; Huiyu Yuan; Johan Evert ten Elshof; Evert Houwman; Gertjan Koster et al.
Source: check_circle
Crossref

Atomic structure of Sr/Si(0 0 1)(1 × 2) surfaces prepared by Pulsed laser deposition

Applied Surface Science
2019 | Journal article
EID:

2-s2.0-85058021636

Part of ISBN:

01694332

Contributors: Parkelj Potočnik, T.; Zupanič, E.; Tong, W.-Y.; Bousquet, E.; Diaz Fernandez, D.; Koster, G.; Ghosez, P.; Spreitzer, M.
Source: Self-asserted source
Tjaša Parkelj Potočnik via Scopus - Elsevier

Multi-stage pulsed laser deposition of high quality epitaxial ultra-thin SrTiO <inf>3</inf> on Si substrates

Applied Surface Science
2018 | Journal article
EID:

2-s2.0-85047725207

Contributors: Diaz-Fernandez, D.; Spreitzer, M.; Parkelj, T.; Suvorov, D.
Source: Self-asserted source
Tjaša Parkelj Potočnik via Scopus - Elsevier

The importance of annealing and stages coverage on the epitaxial growth of complex oxides on silicon by pulsed laser deposition

RSC Advances
2017 | Journal article
EID:

2-s2.0-85021697207

Contributors: Diaz-Fernandez, D.; Spreitzer, M.; Parkelj, T.; Kovač, J.; Suvorov, D.
Source: Self-asserted source
Tjaša Parkelj Potočnik via Scopus - Elsevier