Mohit D. Ganeriwala (0000-0003-4682-3435)

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Mohit D. Ganeriwala is a Marie Skłodowska-Curie Actions (MSCA) postdoctoral researcher at the Department of Electronics and Computer Technology at the University of Granada.
He has active research experience and interests in the area of slid-state device physics, RRAM/memristors, nano-scale device modeling and characterisation.

He received BTech (2012) (Gold medal for academic excellence) in Electronics and Communications from Nirma University India, MTech (2015) (Gold medal for academic excellence and Best research award) and PhD (2020) in Electrical Engineering from the Indian Institute of Technology (IIT) Gandhinagar, India

From May 2020 to Jan 2022 he worked on the post of principal engineer, Compact modeling and characterization at GlobalFoundries. His PhD was focused on developing computationally efficient compact models for III-V Mutli-Gate transistors. He has been a visiting researcher at different National and international institutions including ISRO, India (2012), IIT Kanpur (2015) and JAIST, Japan (2016). And has authored several scientific contributions in various peer-reviewed Journals and International conference proceedings, being an active reviewer of articles from international journals and conferences. He has received several grants and fellowships such as MSCA-IF, European Commission (2021), Visvesvaraya PhD Fellowship, MeitY, Government of India (2015), JASSO Internship Grant, Japan (2016).

Apart from research, he was actively involved in teaching various courses (Semiconductor device modeling, Physics of transistors etc.) and has also received an outstanding graduate teaching fellow award for the same.

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Indian Institute of Technology Gandhinagar: Gandhinagar, Gujarat, IN

2015-06-10 to 2020-08 | PhD (Electrical Engineering)

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Mohit D. Ganeriwala

https://orcid.org/0000-0003-4682-3435

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Education and qualifications (2)

Indian Institute of Technology Gandhinagar: Gandhinagar, Gujarat, IN

Indian Institute of Technology Gandhinagar: Gandhinagar, Gujarat, IN

Works (24)

A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors

Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

TCAD-based investigation of 1/f noise in advanced 22 nm FDSOI MOSFETs

Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors

Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration

A Flexible Laser-Induced Graphene Memristor with Volatile Switching for Neuromorphic Applications

Reconfigurable frequency multipliers based on graphene field-effect transistors

A simplified approach to include confinement induced band structure changes into the NsFET compact model

A Bottom-Up Scalable Compact Model for Quantum Confined Nanosheet FETs

A unified compact model for electrostatics of III–V GAA transistors with different geometries

Insights into the Mechanical and Electrical Properties of a Metal–Phosphorene Interface: An Ab Initio Study with a Wide Range of Metals

Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs

A compact model for III–V nanowire electrostatics including band non-parabolicity

Capacitance and Surface Potential Model for III-V Double-Gate FET

Charge and Capacitance Compact Model for III-V Quadruple-Gate FETs With Square Geometry

A Compact Charge and Surface Potential Model for III–V Cylindrical Nanowire Transistors

An Unified Charge Centroid Model for Silicon and Low Effective Mass III-V Channel Double Gate MOS Transistors

A Simple Charge and Capacitance Compact Model for Asymmetric III-V DGFETs Using CCDA

Computationally efficient analytic charge model for III-V cylindrical nanowire transistors

Modeling of Quantum Confinement and Capacitance in III–V Gate-All-Around 1-D Transistors

Compact Modeling of Gate Capacitance in III–V Channel Quadruple-Gate FETs

Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs

Effect of Pregate Carbon Implant on Narrow Width Behavior and Performance of High- Metal-Gate nMOS Transistors

Anomalous Width Dependence of Gate Current in High-K Metal Gate nMOS Transistors

Peer review (1 review for 1 publication/grant)