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Works (7)

1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

IEEE Electron Device Letters
2024-08 | Journal article
DOI: 10.1109/LED.2024.3404041
Contributors: Li Liu; Jue Wang; Na Ren; Qing Guo; Kuang Sheng
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1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications

Solid-State Electronics
2024-01 | Journal article
DOI: 10.1016/j.sse.2023.108829
Contributors: Li Liu; Jue Wang; Zhengyun Zhu; Hongyi Xu; Qing Guo; Na Ren; Kuang Sheng
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Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current

IEEE Electron Device Letters
2022-01 | Journal article
DOI: 10.1109/LED.2021.3128613
Contributors: Li Liu; Jue Wang; Hengyu Wang; Na Ren; Qing Guo; Kuang Sheng
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Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions

Materials
2022-01-13 | Journal article
DOI: 10.3390/ma15020598
Contributors: Yuan Zou; Jue Wang; Hongyi Xu; Hengyu Wang
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Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

IEEE Journal of Emerging and Selected Topics in Power Electronics
2019-09 | Journal article
DOI: 10.1109/JESTPE.2019.2920927
Contributors: Hengyu Wang; Jue Wang; Li Liu; Na Ren; Jiupeng Wu; Ce Wang; Shu Yang; Kuang Sheng
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Correction to “Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices” [Dec 18 1900-1903]

IEEE Electron Device Letters
2019-02 | Journal article
DOI: 10.1109/LED.2018.2889811
Contributors: Hengyu Wang; Jue Wang; Li Liu; Yucen Li; Baozhu Wang; Hongyi Xu; Shu Yang; Kuang Sheng
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Crossref

Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices

IEEE Electron Device Letters
2018-12 | Journal article
DOI: 10.1109/LED.2018.2874471
Contributors: Hengyu Wang; Jue Wang; Li Liu; Yucen Li; Baozhu Wang; Hongyi Xu; Shu Yang; Kuang Sheng
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