Personal information

Keywords

GaAs, AlGaAs, InGaAs, GaAsN, AlAs, Ge, SiGe, Al2O3, Ga2O3, SrTiO3, MOVPE, MOCVD, ALD, Chemical Beam Epitaxy, CBE, Solid phase epitaxy, Heteroepitaxy, Doping, Defects, Dislocations, Strain, Nanomembrane, Metamorphic buffer layer, Amorphous, Oxides, Optics, X-ray diffraction, X-ray reflectometry, X-ray reciprocal space mapping, Energy dispersive X-ray spectroscopy, Scanning electron microscopy, Atomic force microscopy, Stress measurement using multi-beam optical sensor, Photoluminescence, Fourier transform infrared spectroscopy, Hall effect, Impedance spectroscopy, Raman spectroscopy, Deep level transient spectroscopy

Countries

United States

Activities

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Employment (2)

University of Wisconsin Madison: Madison, WI, US

2017-10 to present | Postdoctoral Researcher (Materials Science and Engineering)
Employment
Source: Self-asserted source
Omar Elleuch

Toyota Technological Institute: Nagoya, JP

2016-10 to 2017-09 | Postdoctoral Researcher
Employment
Source: Self-asserted source
Omar Elleuch

Education and qualifications (1)

Toyota Technological Institute: Nagoya, JP

2012-10 to 2016-09 | PhD / Doctor of Engineering
Education
Source: Self-asserted source
Omar Elleuch

Works (14)

Phase Selection and Structure of Low-Defect-Density γ-Al2O3 Created by Epitaxial Crystallization of Amorphous Al2O3

ACS Applied Materials & Interfaces
2020-12-23 | Journal article
DOI: 10.1021/acsami.0c17606
Contributors: Rui Liu; Omar Elleuch; Zhongyi Wan; Peng Zuo; Tesia D. Janicki; Adam D. Alfieri; Susan E. Babcock; Donald E. Savage; J. R. Schmidt; Paul G. Evans et al.
Source: check_circle
Crossref

Radiation-induced segregation in a ceramic

Nature Materials
2020-09 | Journal article
DOI: 10.1038/s41563-020-0683-y
Contributors: Xing Wang; Hongliang Zhang; Tomonori Baba; Hao Jiang; Cheng Liu; Yingxin Guan; Omar Elleuch; Thomas Kuech; Dane Morgan; Juan-Carlos Idrobo et al.
Source: check_circle
Crossref

High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform

ACS Applied Materials & Interfaces
2020-04-13 | Journal article
DOI: 10.1021/acsami.0c02747
Part of ISSN: 1944-8244
Part of ISSN: 1944-8252
Source: Self-asserted source
Omar Elleuch
grade
Preferred source (of 2)‎

Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy

Journal of Crystal Growth
2019-02 | Journal article
DOI: 10.1016/j.jcrysgro.2018.11.021
Part of ISSN: 0022-0248
Source: Self-asserted source
Omar Elleuch

N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy

Journal of Crystal Growth
2017-06 | Journal article
DOI: 10.1016/j.jcrysgro.2016.12.015
Part of ISSN: 0022-0248
Source: Self-asserted source
Omar Elleuch

Pypvcell: An Open-Source Solar Cell Modeling Library in Python

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
2017-06 | Conference paper
DOI: 10.1109/pvsc.2017.8366371
ISBN: 9781509056057
Source: Self-asserted source
Omar Elleuch

Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE

Journal of Crystal Growth
2016-03 | Journal article
DOI: 10.1016/j.jcrysgro.2015.12.011
Part of ISSN: 0022-0248
Source: Self-asserted source
Omar Elleuch

Double acceptor in p-type GaAsN grown by chemical beam epitaxy

Journal of Crystal Growth
2015-12 | Journal article
DOI: 10.1016/j.jcrysgro.2015.08.030
Part of ISSN: 0022-0248
Source: Self-asserted source
Omar Elleuch

Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes

Journal of Alloys and Compounds
2015-11 | Journal article
DOI: 10.1016/j.jallcom.2015.07.198
Part of ISSN: 0925-8388
Source: Self-asserted source
Omar Elleuch

Effects of arsenic source molecule on N-H related defects formation in GaAsN grown by chemical beam epitaxy

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
2015-06 | Conference paper
DOI: 10.1109/pvsc.2015.7356339
ISBN: 9781479979448
Source: Self-asserted source
Omar Elleuch
grade
Preferred source (of 8)‎

Prospect of InGaAsN solar cells grown by chemical beam epitaxy for high-efficiency multi-junction solar cells

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
2015-06 | Conference paper
Part of DOI: 10.1109/pvsc.2015.7356343
Part of ISBN: 9781479979448
Source: Self-asserted source
Omar Elleuch

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

Journal of Applied Physics
2015-01-28 | Journal article
DOI: 10.1063/1.4906991
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Omar Elleuch

Hole Trap Associated with High Background Doping in P-type GaAsN Grown by Chemical Beam Epitaxy

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials
2014-09-10 | Conference paper
DOI: 10.7567/ssdm.2014.g-4-2
Source: Self-asserted source
Omar Elleuch

Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy

Japanese Journal of Applied Physics
2014-09-01 | Journal article
DOI: 10.7567/jjap.53.091201
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Omar Elleuch

Peer review (30 reviews for 6 publications/grants)

Review activity for Applied physics letters. (1)
Review activity for Journal of alloys and compounds. (2)
Review activity for Journal of applied physics. (13)
Review activity for Journal of chemical physics. (2)
Review activity for Review of scientific instruments online. (4)
Review activity for Vacuum. (8)
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