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Employment (1)

IEMN-CNRS: Lille, FR

2021-10-01 to 2024-10-01 | PhD student (Microeletronics)
Employment
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Youssef Hamdaoui

Works (4)

1200-V Fully Vertical GaN-on-Silicon p-i-n Diodes With Avalanche Capability and High On-State Current Above 10 A

IEEE Transactions on Electron Devices
2025-01 | Journal article
DOI: 10.1109/TED.2024.3496440
Contributors: Youssef Hamdaoui; Sondre Michler; Adrien Bidaud; Katir Ziouche; Farid Medjdoub
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Crossref

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

Micromachines
2024-09-15 | Journal article
DOI: 10.3390/mi15091157
Contributors: Youssef Hamdaoui; Sofie S. T. Vandenbroucke; Sondre Michler; Katir Ziouche; Matthias M. Minjauw; Christophe Detavernier; Farid Medjdoub
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Optimization of Non-alloyed Backside Ohmic Contacts to N-face GaN for Fully Vertical GaN-on-Silicon Based Power Devices

2024-08-20 | Preprint
DOI: 10.20944/preprints202408.1457.v1
Contributors: Youssef HAMDAOUI; Sofie Vandenbroucke; Sondre Michler; Katir Ziouche; Matthias Minjauw; Christophe Detavernier; Farid Medjdoub
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Crossref
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Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

Applied Physics Express
2023-12-01 | Journal article
DOI: 10.35848/1882-0786/ad106c
Contributors: Youssef Hamdaoui; Idriss Abid; Sondre Michler; Katir Ziouche; Farid Medjdoub
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