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Employment (1)

Seoul National University: Seoul, KR

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Source: Self-asserted source
Tae Won Park

Works (7)

An Analysis of Components and Enhancement Strategies for Advancing Memristive Neural Networks

Advanced Materials
2025-02 | Journal article
DOI: 10.1002/adma.202412549
Contributors: Hyungjun Park; Joon‐Kyu Han; Seongpil Yim; Dong Hoon Shin; Tae Won Park; Kyung Seok Woo; Soo Hyung Lee; Jae Min Cho; Hyun Wook Kim; Taegyun Park et al.
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Crossref

Heterogeneous reservoir computing in second-order Ta2O5/HfO2 memristors

Nanoscale Horizons
2024 | Journal article
DOI: 10.1039/d3nh00493g
Part of ISSN: 2055-6756
Part of ISSN: 2055-6764
Contributors: Néstor Ghenzi; Tae Won Park; Seung Soo Kim; Hae Jin Kim; Yoon Ho Jang; Kyung Seok Woo; Cheol Seong Hwang
Source: Self-asserted source
Tae Won Park

Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors

ACS Applied Materials & Interfaces
2024-11-27 | Journal article
DOI: 10.1021/acsami.4c15598
Part of ISSN: 1944-8244
Part of ISSN: 1944-8252
Contributors: Tae Won Park; Jiwon Moon; Dong Hoon Shin; Hae Jin Kim; Seung Soo Kim; Jea Min Cho; Hyungjun Park; Kyung Seok Woo; Dong Yun Kim; Sunwoo Cheong et al.
Source: Self-asserted source
Tae Won Park

In‐Materia Annealing and Combinatorial Optimization Based on Vertical Memristive Array

Advanced Materials
2024-08-28 | Journal article
DOI: 10.1002/adma.202410191
Contributors: Soo Hyung Lee; Sunwoo Cheong; Jea Min Cho; Néstor Ghenzi; Dong Hoon Shin; Yoon Ho Jang; Janguk Han; Tae Won Park; Dong Yun Kim; Sung Keun Shim et al.
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Comparative study on the stability of ferroelectric polarization of HfZrO2 and AlScN thin films over the depolarization effect

Journal of Applied Physics
2024-07-14 | Journal article
DOI: 10.1063/5.0214909
Contributors: Kyung Do Kim; Seung Kyu Ryoo; Han Sol Park; Seungheon Choi; Tae Won Park; Min Kyu Yeom; Cheol Seong Hwang
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Crossref

A ternary gate-connected threshold switching thin-film transistor

Applied Physics Letters
2024-04-08 | Journal article
DOI: 10.1063/5.0187155
Contributors: Kyung Seok Woo; Yonghee Lee; Joon-Kyu Han; Tae Won Park; Yoon Ho Jang; Cheol Seong Hwang
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Crossref

Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading

Advanced Electronic Materials
2023-03 | Journal article
DOI: 10.1002/aelm.202200998
Part of ISSN: 2199-160X
Part of ISSN: 2199-160X
Contributors: Seung Soo Kim; Soo Kyeom Yong; Jihun Kim; Jin Myung Choi; Tae Won Park; Hyun Young Kim; Hae Jin Kim; Cheol Seong Hwang
Source: Self-asserted source
Tae Won Park
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