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Institute of Microelectronics of the Chinese Academy of Sciences: Beijing, CN

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Leshan Qiu

Works (5)

Analysis of SiC Damage Associated with Single-Event Gate Oxide Damage

IEEE Transactions on Nuclear Science
2025 | Journal article
DOI: 10.1109/TNS.2025.3539227
Contributors: Leshan Qiu; Yun Bai; Yan Chen; Zewei Dong; Jieqin Ding; Jilong Hao; Yidan Tang; Xiaoli Tian; Xinyu Liu
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Crossref

Effect of Split-Gate Structure in SiC MOSFET on Single-Event Gate Oxide Damage

IEEE Transactions on Electron Devices
2025 | Journal article
DOI: 10.1109/TED.2025.3535479
Contributors: Leshan Qiu; Yun Bai; Yan Chen; Yiping Xiao; Jieqin Ding; Yidan Tang; Xiaoli Tian; Chaoming Liu; Xinyu Liu
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Crossref

A Study on Short Circuit Characteristics of 4H-SiC MOSFET Coupled With Electron Irradiation

IEEE Transactions on Electron Devices
2025-01 | Journal article
DOI: 10.1109/TED.2024.3508660
Contributors: Yan Chen; Yun Bai; Antao Wang; Leshan Qiu; Jieqin Ding; Yidan Tang; Xiaoli Tian; Jilong Hao; Xuan Li; Xinyu Liu
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Crossref

Gate Length Dependence of Bias Temperature Instabilities up to 400 °C in 4H-SiC CMOS Devices

IEEE Electron Device Letters
2024 | Journal article
DOI: 10.1109/LED.2024.3485631
Contributors: Zewei Dong; Yun Bai; Leshan Qiu; Chengyue Yang; Jilong Hao; Yidan Tang; Xuan Li; Xiaoli Tian; Xinyu Liu
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Crossref

Degradation Under Low Drain Bias Induced by Heavy Ion in SiC MOSFETs

IEEE Transactions on Nuclear Science
2024-11 | Journal article
DOI: 10.1109/TNS.2024.3481367
Contributors: Leshan Qiu; Yun Bai; Zewei Dong; Jieqin Ding; Jilong Hao; Yidan Tang; Xiaoli Tian; Chengzhan Li; Xinyu Liu
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Crossref
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