Personal information

United States

Activities

Employment (2)

Naval Information Warfare Center Pacific: San Diego, US

Employment
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Paul de la Houssaye

Centre National de la Recherche Scientifique: Bagneaux, FR

1988-11 to 1989-11 | Research Associate (Laboratoire de Microstructures et de Microélectronique)
Employment
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Paul de la Houssaye

Education and qualifications (3)

Stanford University: Stanford, US

M.S. (Applied Physics)
Education
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Paul de la Houssaye

Stanford University: Stanford, US

Ph.D. (Applied Physics)
Education
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Paul de la Houssaye

California Institute of Technology: Pasadena, US

B.S. APh
Education
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Paul de la Houssaye

Works (17)

A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier

IEEE Microwave and Guided Wave Letters
Journal article
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A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider

IEEE Microwave and Guided Wave Letters
Journal article
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Advanced thin-film silicon-on-sapphire technology: microwave circuit applications

IEEE Transactions on Electron Devices
Journal article
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Characterization of Silicon-on-Sapphire Material and Devices for Radio Frequency Applications

Journal of The Electrochemical Society
Journal article
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Comparative Hall Mobilities of Ion Implanted Boron and Implanted Carbon Plus Boron in Insulating Diamond

Journal of The Electrochemical Society
Journal article
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Demonstration of Y1Ba2Cu3O7−δ and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

Applied Physics Letters
Journal article
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Effect of thermal treatment on the mechanical and structural properties of gold thin films

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Hall mobility and carrier concentration versus temperature for type IIa natural insulating diamond doped with boron by ion implantation

Journal of Applied Physics
Journal article
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High-mobility fully depleted thin-film SOS MOSFET's

IEEE Transactions on Electron Devices
Journal article
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Integration of Si and SiGe with Al2O3 (sapphire)

Microelectronic Engineering
Journal article
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Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's

IEEE Electron Device Letters
Journal article
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Noise Driven Coupled Nonlinear Systems: A “Dynamical Multilayer Perceptron” Demonstrating XOR Functionality

IEEE Access
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Photonic Silicon Device Physics.

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SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/

IEEE Electron Device Letters
Journal article
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Silicon-on-Sapphire Material and Device Properties at High and Low Temperature

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Silicon-on-sapphire MOSFET transmit / receive switch for L and S band transceiver applications

Electronics Letters
Journal article
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The effects of microcrystalline structure on the photoluminescence of porous silicon-on-sapphire

Journal of Applied Physics
Journal article
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